advanced power p-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss -140v simple drive requirement r ds(on) 180m fast switching characteristic i d -15a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4.0 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice -60 -55 to 150 200810031 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v continuous drain current, v gs @ 10v 1 operating junction temperature range -9.7 pulsed drain current 1 thermal data parameter storage temperature range -55 to 150 31.3 total power dissipation + 20 -15 rohs-compliant product ap15p15gi rating -140 g d s g d s to-220cfm(i) advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220cfm isolation package is widely preferred for commercial- industrial through hole applications.
ap15p15gi electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-1ma -140 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-12a - - 180 m ? ,
ap15p15gi fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 130 140 150 160 246810 -v gs , gate-to-source voltage (v) r ds(on) (m
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap15p15gi q v g -10v q gs q gd q g charge 0 3 6 9 12 15 0 20406080 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds = -80v i d = -12a 0 400 800 1200 1600 2000 2400 2800 3200 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 1 10 100 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 10us 100us 1ms 10ms 100ms 1s dc t d(on) t r t d(off) t f v ds v gs 10% 90%
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